Investigation of Defects in N - Type 4 H - Sic and Semi - Insulating 6 H - Sic Using Photoluminescence Spectroscopy

Identification of the carbon antisite-vacancy pair in 4H-SiC.

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacan...

Non-Destructive Evaluation of SiC wafer for Power Device Defect detection in μm~nm scale using optical analytical technique

Tomoaki HATAYAMA Power devices using Silicon Carbide (SiC) are already commercialized and are moving into mass production, but commercial SiC wafers have several types of defects. It is important to have techniques for analyzing a variety of defects, because these defects decrease the yield ratio of SiC devices. In this paper, we did complex analysis on sub-millimeterand nanometer-scale defects...

Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy

Deep Levels in Sic

Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. Much progress has further been achieved in identifying minority charge carrier lifetime limiting defects, which may be attribute...

Investigation of Effective Parameters on Densification of ZrB2-SiC Based Composites Using Taguchi Method

Abstract The main goal of this study is optimization of densification of ZrB2-SiC composites reinforced with chopped Cf prepared by SPS. Taguchi method is employed as statistical design of experiment (DOE) to optimize densification parameters including SiC, Cf, MoSi2, HfB2 and ZrC content, milling time of Cf and SPS parameters such as temperature, time and pressure. Each of these factors ...